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EEPROM Memory Cassette
ROM-KD-B


Capacity: 32K word. Access time: 150ns. When using SYSMAC-CPT, can not be written in EPROM. To write
OMRON
EEPROM Memory Cassette
ROM-JD-B


Capacity: 16K word. Access time: 150ns. When using SYSMAC-CPT, can not be written in EPROM. To write
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EEPROM Memory Cassette
ROM-ID-B


Write voltage: 12.5V. Access time: 150ns.
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CPU Unit
C200HX-CPU85-ZE


UM: 63.2K words. DM: 6K words. EM: 6Kx16 banks(96K) words. Instruction processing time (basic instru
OMRON
CPU Unit
C200HX-CPU65-ZE


UM: 63.2K words. DM: 6K words. EM: 6Kx8 banks(48K) words. Instruction processing time (basic instruc
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CPU Unit
C200HX-CPU64-ZE


UM: 31.2K words. DM: 6K words. EM: 6Kx3 banks(18K) words. Instruction processing time (basic instruc
OMRON
CPU Unit
C200HX-CPU64-E


UM: 31.2K words. DM: 6K words. EM: 6Kx3 banks(18K) words. Instruction processing time (basic instruc
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CPU Unit
C200HX-CPU54-ZE


UM: 31.2K words. DM: 6K words. EM: 6Kx3 banks(18K) words. Instruction processing time (basic instruc
OMRON
CPU Unit
C200HX-CPU54-E


UM: 31.2K words. DM: 6K words. EM: 6Kx3 banks(18K) words. Instruction processing time (basic instruc
OMRON
CPU Unit
C200HX-CPU44-ZE


UM: 31.2K words. DM: 6K words. EM: 6Kx3 banks(18K) words. Instruction processing time (basic instruc
OMRON
CPU Unit
C200HX-CPU44-E


UM: 31.2K words. DM: 6K words. EM: 6Kx3 banks(18K) words. Instruction processing time (basic instruc
OMRON
CPU Unit
C200HX-CPU34-ZE


UM: 31.2K words. DM: 6K words. EM: 6Kx3 banks(18K) words. Instruction processing time (basic instruc
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